Deepika Yadav, Youssef Tobah, Kenta Sugawara, Junki Mitsushio, Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji
http://ieeexplore.ieee.org/document/7999519/
Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.
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